Quartz Tube Semiconductor Grade Clear Fused Silica For Diffusion Furnace Wafer Process Vacuum Sealing Laboratory Custom Size
Produktdetails
| Dichte: | 2,2 g/cm3 | Schmelzpunkt: | 1750-1850 ℃ |
|---|---|---|---|
| Tempernpunkt: | 1180 ℃ | Material: | SiO2> 99,99% |
| Stammpunkt: | 1100℃ | Härte: | Morse 6.5 |
Produktbeschreibung
Produkt-Highlights
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